Loading…

Low-Temperature Fast Growth of Polycrystalline Silicon Thin Film from SiCl4 Light-Diluted Hydrogen by PECVD

The polycrystalline silicon films deposited at a high deposition rate over 3.5Aring/S along with a crystalline fraction of 80% have been obtained using decomposing SiCl 4 gas lightly diluted in hydrogen under low temperature of 200-300 by plasma enhanced chemical vapor deposition technique. The depo...

Full description

Saved in:
Bibliographic Details
Main Authors: Xuanying Lin, Rui Huang, Kuixun Lin, Yunpeng Yu, Junhong Wei, Zusong Zhu
Format: Conference Proceeding
Language:English
Subjects:
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The polycrystalline silicon films deposited at a high deposition rate over 3.5Aring/S along with a crystalline fraction of 80% have been obtained using decomposing SiCl 4 gas lightly diluted in hydrogen under low temperature of 200-300 by plasma enhanced chemical vapor deposition technique. The deposition rate and the crystalline fraction strongly depend not only on the if power, but also on the hydrogen dilution ratio. It is found that the higher growth rate crystalline fraction can be achieved using light-hydrogen dilution in contrast to SiH 4 /H 2 gases and through the enhancement of the gas-phase reaction in SiCl 4 /H 2 plasma by the optimum radio frequency power
ISSN:0160-8371
DOI:10.1109/WCPEC.2006.279818