A heterojunction bipolar transistor large-signal model for high power microwave applications

A large-signal model is presented for HBT's. The model accounts for self-heating effects and is based on the Gummel-Poon formulation. Full model compatibility with the commercially available software package LIBRA is ensured. The model incorporates temperature dependence for most of its paramet...

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Bibliographic Details
Main Authors: Samelis, A., Pavlidis, D.
Format: Conference Proceeding
Language:English
Subjects:
Application software
Forward contracts
Gallium arsenide
Heterojunction bipolar transistors
Laboratories
Photonic band gap
Solid state circuits
Temperature dependence
Thermal resistance
Voltage
Online Access:Request full text
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Description
Summary:A large-signal model is presented for HBT's. The model accounts for self-heating effects and is based on the Gummel-Poon formulation. Full model compatibility with the commercially available software package LIBRA is ensured. The model incorporates temperature dependence for most of its parameters and has been employed for the analysis of the DC and microwave power characteristics of AlGaAs-GaAs HBT's. Good agreement between simulated and directly measured DC and microwave characteristics support the validity of the model.< >
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1995.406193