Nonlinear table-based static HBT model including thermal effects

A nonlinear table-based thermal model of the static HBT behavior is presented for the first time and validated under DC operation. The generated model uses table-based nonlinear functions I c and V be in the output and input ports, respectively, and both are defined vs. I b and V ce by using a non-u...

Full description

Saved in:
Bibliographic Details
Main Authors: Nunez-Fernandez, B., Fernandez-Barciela, M., Fernandez-Manin, G., Mojon, O., Sanchez, E., Tasker, P.J.
Format: Conference Proceeding
Language:English
Subjects:
Equations
FETs
Heterojunction Bipolar Transistor
Heterojunction bipolar transistors
III-V semiconductor materials
Integrated circuit modeling
MMICs
modeling
Predictive models
Temperature dependence
Temperature distribution
Thermal conductivity
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A nonlinear table-based thermal model of the static HBT behavior is presented for the first time and validated under DC operation. The generated model uses table-based nonlinear functions I c and V be in the output and input ports, respectively, and both are defined vs. I b and V ce by using a non-uniform bias grid. Thermal modeling (self-biasing and environment temperature dependence) is done by means of two analytical functions (one for each device port) involving table-based nonlinear coefficients. Five tables are the minimum required to accurately predict the device dc behavior vs. temperature. Model extraction is direct and does not require optimization. Excellent results have been obtained for different InGaAs/GaAs HBTs in the range 10 to 100 degC
DOI:10.1109/INMMIC.2006.283494