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Nonlinear table-based static HBT model including thermal effects
A nonlinear table-based thermal model of the static HBT behavior is presented for the first time and validated under DC operation. The generated model uses table-based nonlinear functions I c and V be in the output and input ports, respectively, and both are defined vs. I b and V ce by using a non-u...
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| creator | Nunez-Fernandez, B. Fernandez-Barciela, M. Fernandez-Manin, G. Mojon, O. Sanchez, E. Tasker, P.J. |
| description | A nonlinear table-based thermal model of the static HBT behavior is presented for the first time and validated under DC operation. The generated model uses table-based nonlinear functions I c and V be in the output and input ports, respectively, and both are defined vs. I b and V ce by using a non-uniform bias grid. Thermal modeling (self-biasing and environment temperature dependence) is done by means of two analytical functions (one for each device port) involving table-based nonlinear coefficients. Five tables are the minimum required to accurately predict the device dc behavior vs. temperature. Model extraction is direct and does not require optimization. Excellent results have been obtained for different InGaAs/GaAs HBTs in the range 10 to 100 degC |
| doi_str_mv | 10.1109/INMMIC.2006.283494 |
| format | conference_proceeding |
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| language | eng |
| recordid | cdi_ieee_primary_4062245 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Equations FETs Heterojunction Bipolar Transistor Heterojunction bipolar transistors III-V semiconductor materials Integrated circuit modeling MMICs modeling Predictive models Temperature dependence Temperature distribution Thermal conductivity |
| title | Nonlinear table-based static HBT model including thermal effects |
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