Modeling of Multi-Finger SiGe HBTs and the Error Metrics of the Large Signal Model Performances

A compact large-signal model for multi-finger SiGe HBTs is proposed and experimentally validated. The model formulation leads to a simple parameter extraction procedure. Model development was carried out for a multi-finger SiGe HBT fabricated in a commercial process technology. It consisted of 72 fi...

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Bibliographic Details
Main Authors: Angelov, I., Samelis, A., Fernandez-Barciela, M., Mojon, T.
Format: Conference Proceeding
Language:English
Subjects:
Data mining
Equivalent circuits
Fingers
Frequency dependence
Germanium silicon alloys
Heterojunction bipolar transistors
Radio frequency
Silicon germanium
Solid modeling
Thermal resistance
Online Access:Request full text
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Summary:A compact large-signal model for multi-finger SiGe HBTs is proposed and experimentally validated. The model formulation leads to a simple parameter extraction procedure. Model development was carried out for a multi-finger SiGe HBT fabricated in a commercial process technology. It consisted of 72 fingers each with a drawn emitter geometry of 2times20times0.5 mum 2 . Results show good fit between measured and simulated DC, S-parameter and LS characteristics
DOI:10.1109/INMMIC.2006.283512