High-Frequency Effects of Orthogonal Interconnect Layers on Inductance in High-Speed VLSI Circuits

This communication deals with frequency behavior of orthogonal interconnect layers on inductance in high-speed VLSI circuits. The RLC parameters of the distributed model are determined by electromagnetic simulations. We evidence the error made on inductance in the range 1-50 GHz for three traditiona...

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Bibliographic Details
Main Authors: Quere, Y., Le Gouguec, T., Tanguy, N., Martin, P.-M., Le Berre, D., Huret, F.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Circuit simulation
CMOS technology
Copper
Crosstalk
Frequency dependence
Inductance
Integrated circuit interconnections
RLC circuits
Very large scale integration
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Summary:This communication deals with frequency behavior of orthogonal interconnect layers on inductance in high-speed VLSI circuits. The RLC parameters of the distributed model are determined by electromagnetic simulations. We evidence the error made on inductance in the range 1-50 GHz for three traditional interconnect configurations. A time-domain analysis highlights the impact of the inductance error on digital signals propagation. This analysis uses a numerical tool to take into account the frequency dependence of RLC parameters
DOI:10.1109/SPI.2006.289237