Space-charge photomodulation in metal/insulator/amorphous semiconductor structures (TFTs)

The space-charge density variation induced by illumination in metal-insulator-amorphous-semiconductor structures has been observed for the first time by monitoring the transient photocurrent. The dependence of the charge variation on the gate voltage provides a useful tool for the flatband voltage d...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1989-12, Vol.36 (12), p.2825-2828
Main Authors: Fortunato, G., Mariucci, L., Reita, C., Foglietti, P.
Format: Article
Language:English
Subjects:
Amorphous semiconductors
Applied sciences
Channel bank filters
Conducting materials
Electronics
Exact sciences and technology
Insulation
Metal-insulator structures
Photoconducting materials
Photoconductivity
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature measurement
Thin film transistors
Transistors
Voltage
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Summary:The space-charge density variation induced by illumination in metal-insulator-amorphous-semiconductor structures has been observed for the first time by monitoring the transient photocurrent. The dependence of the charge variation on the gate voltage provides a useful tool for the flatband voltage determination.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.40943