Depletion-Mode MOSFET on n-GaAs substrate with HfO2 and Silicon Interface Passivation

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Bibliographic Details
Main Authors: Ok, Injo, Kim, Jack C., Zhang, M., Lee, T., Zhu, F., Thareja, G., Yu, L., Koveshnikov, S., Tsai, W., Tokranov, V., Yakimov, M., Oktyabrsky, S., Lee, Jack C.
Format: Conference Proceeding
Language:English
Subjects:
Atherosclerosis
Electric variables
Frequency
Gallium arsenide
Hafnium oxide
MOSFET circuits
Passivation
Personal digital assistants
Silicon
Spectroscopy
Online Access:Request full text
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ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2006.305112