Strained SiGe/Ge Buried Channel pMOSFETs Design For High Performance Applications

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Bibliographic Details
Main Authors: Wang, Xinlin, Rim, Ken, Shang, Huiling, Koester, Steve, Oldiges, Phil, Ieong, Meikei
Format: Conference Proceeding
Language:English
Subjects:
Carrier confinement
Degradation
Doping profiles
Germanium silicon alloys
MOSFETs
Niobium compounds
Scalability
Semiconductor device modeling
Silicon germanium
Voltage
Online Access:Request full text
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ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2006.305125