1.74 mΩcm2, High-Voltage 4H-SiC Vertical-Channel JFETs for High-Power Applications

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Bibliographic Details
Main Authors: Cheng, L., Sankin, I., Merrett, N., Casady, J. R. B., Draper, W., King, W., Bondarenko, V., Mazzola, M. S., Casady, J. B.
Format: Conference Proceeding
Language:English
Subjects:
Bonding
FETs
JFETs
Laboratories
Leakage current
Power conditioning
Robust stability
Silicon carbide
Vehicles
Voltage
Online Access:Request full text
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ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2006.305165