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1.74 mΩcm2, High-Voltage 4H-SiC Vertical-Channel JFETs for High-Power Applications

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Main Authors:	Cheng, L., Sankin, I., Merrett, N., Casady, J. R. B., Draper, W., King, W., Bondarenko, V., Mazzola, M. S., Casady, J. B.
Format:	Conference Proceeding
Language:	English
Subjects:	Bonding FETs JFETs Laboratories Leakage current Power conditioning Robust stability Silicon carbide Vehicles Voltage
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creator	Cheng, L. Sankin, I. Merrett, N. Casady, J. R. B. Draper, W. King, W. Bondarenko, V. Mazzola, M. S. Casady, J. B.
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doi_str_mv	10.1109/DRC.2006.305165
format	conference_proceeding
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recordid	cdi_ieee_primary_4097582
source	IEEE Xplore All Conference Series
subjects	Bonding FETs JFETs Laboratories Leakage current Power conditioning Robust stability Silicon carbide Vehicles Voltage
title	1.74 mΩcm2, High-Voltage 4H-SiC Vertical-Channel JFETs for High-Power Applications
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