Some solutions for writing current reduction and high density application of phase change memory

High writing current is the bottle-neck of PCM application and efforts focus on merely materials doping to improve crystal resistivity, novel structure to decrease active area etc. Here some solutions of our group are shown, including Si doped GST, novel 2D and 3D memory cell structure and multistat...

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Bibliographic Details
Main Authors: Yinyin Lin, Jie Feng, Yaifei Cai, Hangbing Lv, Feifei Liao, Xin Liu, Tingao Tang, Baowei Qiao, Yunfeng Lai, Yi Zhang, Bingchu Cai, Bomy Chen
Format: Conference Proceeding
Language:English
Subjects:
CMOS process
CMOS technology
Conductivity
Crystallization
Doping
Lithography
Microelectronics
Phase change materials
Phase change memory
Writing
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Summary:High writing current is the bottle-neck of PCM application and efforts focus on merely materials doping to improve crystal resistivity, novel structure to decrease active area etc. Here some solutions of our group are shown, including Si doped GST, novel 2D and 3D memory cell structure and multistate storage
DOI:10.1109/ICSICT.2006.306468