Towards Quantum Ballistic Field-Effect Transistors: Design and Experimental Results

Summary form only given. In this talk, we show that properly designed 1D-QB conductor can actually lead to voltage-gain. Conceptually, the electric conduction in the 1D-QB conductor can be described by the Landauer-Buttiker formalism in terms of the relative positions between the 1D sub-bands (SB),...

Full description

Saved in:
Bibliographic Details
Main Authors: Jin, Y., Gremion, E., Cavanna, A., Gennser, U., Etienne, B., Ulysse, C.
Format: Conference Proceeding
Language:English
Subjects:
Circuits
Conductors
Electron mobility
FETs
Gallium arsenide
Microcomputers
Molecular beam epitaxial growth
Nanostructures
Reservoirs
Voltage
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Summary form only given. In this talk, we show that properly designed 1D-QB conductor can actually lead to voltage-gain. Conceptually, the electric conduction in the 1D-QB conductor can be described by the Landauer-Buttiker formalism in terms of the relative positions between the 1D sub-bands (SB), the electrochemical potential of the source reservoir and that of the drain reservoir, and the transmission coefficient. As the position of 1D-SB versus the electrochemical potential of the source reservoir can be modulated by split-gates, a step-like variation of the drain-source current can thus be realized, leading to a high transconductance. Besides, the non-linearity in the QB regime takes place when the number of occupied 1D-SB by the source reservoir and by the drain reservoir is unequal, which results in a low output conductance. A high voltage-gain can hence be accomplished
DOI:10.1109/ICSICT.2006.306656