Simulation of InGaN/GaN multiple quantum well light-emitting diodes with Quantum Dot electrical and optical effects

We report on the 2D simulations of electrical and optical characteristics for green color InGaN/GaN multiple quantum well light-emitting diodes by the APSYS software. The In-rich quantum dot-like structure in InGaN/GaN multiple quantum wells has been considered with quantum dot model. The simulation...

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Bibliographic Details
Main Authors: Xia, C.S., Lu, W., Simon Li, Z.M., Li, Z.Q.
Format: Conference Proceeding
Language:English
Subjects:
Gallium nitride
Light emitting diodes
Optical polarization
Physics
Quantum dots
Quantum well devices
Ray tracing
Resistance heating
Spontaneous emission
Thermionic emission
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Summary:We report on the 2D simulations of electrical and optical characteristics for green color InGaN/GaN multiple quantum well light-emitting diodes by the APSYS software. The In-rich quantum dot-like structure in InGaN/GaN multiple quantum wells has been considered with quantum dot model. The simulation results are in good agreement with experiment and indicate that quantum dot spontaneous emission and non-equilibrium quantum transport play an important role in the InGaN/GaN multiple quantum well light-emitting diodes
ISSN:2158-3234
DOI:10.1109/NUSOD.2006.306718