Monte-Carlo Simulation of Decananometric Double-Gate SOI devices: Multi-Subband vs. 3D-Electron Gas with Quantum Corrections

In this paper, two Monte-Carlo simulators implementing different models of the influence of carrier quantization on the electrostatics and transport are applied to sub-100nm double-gate SOI devices. To this purpose a new stable and efficient scheme to implement the contacts in the simulation of DG S...

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Bibliographic Details
Main Authors: Riolino, I., Braccioli, M., Lucci, L., Esseni, D., Fiegna, C., Palestri, R., Selmi, L.
Format: Conference Proceeding
Language:English
Subjects:
Effective mass
Electrons
Electrostatics
MOSFETs
Particle scattering
Poisson equations
Quantization
Semiconductor films
Silicon
Strontium
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Summary:In this paper, two Monte-Carlo simulators implementing different models of the influence of carrier quantization on the electrostatics and transport are applied to sub-100nm double-gate SOI devices. To this purpose a new stable and efficient scheme to implement the contacts in the simulation of DG SOI devices is introduced first. Then, results in terms of drain current and microscopic quantities are compared, providing a comparison between a well assessed semiclassical tool and a more rigorous multi-subband code
ISSN:1930-8876
DOI:10.1109/ESSDER.2006.307663