MEMS-Based Reconfigurable Multi-band BiCMOS Power Amplifier

This paper presents a small dual-band 0.9GHz/1.8GHz inverse class F power amplifier with load-switch functionality using a single BiCMOS amplifier line-up with a MEMS based reconfigurable matching network. The realized prototype measures 40mm 2 , offers 31dBm with 40% efficiency at 0.9GHz and 30dBm...

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Bibliographic Details
Main Authors: De Graauw, A.J.M., Steeneken, P.G., Chanlo, C., Dijkhuis, J., Pramm, S., Van Bezooijen, A., ten Dolle, H.K.J., Van Straten, F., Lok, P.
Format: Conference Proceeding
Language:English
Subjects:
BiCMOS
BiCMOS integrated circuits
Impedance matching
MEMS
Micromechanical devices
Operational amplifiers
Power amplifiers
Prototypes
Radio frequency
Radiofrequency amplifiers
Reconfigurable Matching Networks
RF power amplifier
Virtual colonoscopy
Voltage
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Summary:This paper presents a small dual-band 0.9GHz/1.8GHz inverse class F power amplifier with load-switch functionality using a single BiCMOS amplifier line-up with a MEMS based reconfigurable matching network. The realized prototype measures 40mm 2 , offers 31dBm with 40% efficiency at 0.9GHz and 30dBm with 34% at 1.8GHz. The load-switch provides up to 10% efficiency improvement at 0.9GHz for reduced power levels
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.2006.311134