InGaP-Plus - A major advance in GaAs HBT Technology

InGaP-Plus, a manufacturable GaAs BiFET process has been developed at ANADIGICS for high volume production of ICs for the wireless and broadband businesses. The epitaxial structure is such that the HBT and pHEMT devices can be optimized independently, without compromise, for the application at hand....

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Bibliographic Details
Main Authors: Gupta, A., Peatman, B., Shokrani, M., Krystek, W., Arell, T.
Format: Conference Proceeding
Language:English
Subjects:
BiCMOS
BiCMOS integrated circuits
BiFET
Cost function
device integration
FET
FETs
GaAs
Gallium arsenide
HBT
Heterojunction bipolar transistors
High power amplifiers
InGaP
Low-noise amplifiers
manufacturable
Manufacturing processes
pHEMT
PHEMTs
Switches
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Summary:InGaP-Plus, a manufacturable GaAs BiFET process has been developed at ANADIGICS for high volume production of ICs for the wireless and broadband businesses. The epitaxial structure is such that the HBT and pHEMT devices can be optimized independently, without compromise, for the application at hand. The process uses previously developed process modules and is only moderately more complex than a stand-alone HBT flow. Tens of millions of WLAN and cellular handset PAs have been manufactured using InGaP-Plus with yields comparable to HBT-only processes. This new process technology offers new degrees of freedom in RFIC design and has become the technology of choice for new products. An example of one such product is provided in this paper
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2006.319891