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InGaP-Plus - A major advance in GaAs HBT Technology

InGaP-Plus, a manufacturable GaAs BiFET process has been developed at ANADIGICS for high volume production of ICs for the wireless and broadband businesses. The epitaxial structure is such that the HBT and pHEMT devices can be optimized independently, without compromise, for the application at hand....

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Main Authors:	Gupta, A., Peatman, B., Shokrani, M., Krystek, W., Arell, T.
Format:	Conference Proceeding
Language:	English
Subjects:	BiCMOS BiCMOS integrated circuits BiFET Cost function device integration FET FETs GaAs Gallium arsenide HBT Heterojunction bipolar transistors High power amplifiers InGaP Low-noise amplifiers manufacturable Manufacturing processes pHEMT PHEMTs Switches
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creator	Gupta, A. Peatman, B. Shokrani, M. Krystek, W. Arell, T.
description	InGaP-Plus, a manufacturable GaAs BiFET process has been developed at ANADIGICS for high volume production of ICs for the wireless and broadband businesses. The epitaxial structure is such that the HBT and pHEMT devices can be optimized independently, without compromise, for the application at hand. The process uses previously developed process modules and is only moderately more complex than a stand-alone HBT flow. Tens of millions of WLAN and cellular handset PAs have been manufactured using InGaP-Plus with yields comparable to HBT-only processes. This new process technology offers new degrees of freedom in RFIC design and has become the technology of choice for new products. An example of one such product is provided in this paper
doi_str_mv	10.1109/CSICS.2006.319891
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	BiCMOS BiCMOS integrated circuits BiFET Cost function device integration FET FETs GaAs Gallium arsenide HBT Heterojunction bipolar transistors High power amplifiers InGaP Low-noise amplifiers manufacturable Manufacturing processes pHEMT PHEMTs Switches
title	InGaP-Plus - A major advance in GaAs HBT Technology
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