High Quality Passive Devices Fabricated Inexpensively in Advanced RF-CMOS Technologies with Copper BEOL

High quality factor inductors and highly matched low capacitance density horizontal parallel plate metal-insulator-metal capacitors were fabricated in 130nm RF-CMOS technology with minimal or zero processing step addition. The high quality factor inductors were made using a novel triple damascene in...

Full description

Saved in:
Bibliographic Details
Main Authors: He, Z.X., Erturk, M., Ding, H., Moon, M., Gordon, E., Daley, D., Stamper, A.K., Coolbaugh, D., Eshun, E., Gordon, M., Joseph, A., St Onge, S., Dunn, J.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Capacitors
Copper
Costs
Cu BEOL
Damascene integration
Fabrication
Inductors
Manufacturing
MIM capacitors
Passive Devices
Q factor
RF-CMOS
Wire
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:High quality factor inductors and highly matched low capacitance density horizontal parallel plate metal-insulator-metal capacitors were fabricated in 130nm RF-CMOS technology with minimal or zero processing step addition. The high quality factor inductors were made using a novel triple damascene integration technique. Peak quality factor of 26 was demonstrated for a 0.3nH inductor. The low capacitance density MIM capacitors were fabricated using standard BEOL copper planes with zero addition of processing steps. Capacitance density value of 0.66 fF/mum 2 was achieved for a six level copper wiring BEOL. Impact of copper plane was characterized to ensure optimal manufacturing production
DOI:10.1109/SMIC.2007.322791