1200-V Low-Loss IGBT Module With Low Noise Characteristics and High I/t Controllability

This paper presents the enhanced characteristics of a newly developed low-loss and low-noise 1200-V insulated gate bipolar transistor (IGBT) module. In order to realize low-noise emission, it is necessary not only to improve the reverse recovery characteristics of the free wheeling diode (FWD) but a...

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Bibliographic Details
Published in:IEEE transactions on industry applications 2007-03, Vol.43 (2), p.513-519
Main Authors: Onozawa, Y., Otsuki, M., Iwamuro, N., Miyashita, S., Miyasaka, T., Seki, Y., Matsumoto, T.
Format: Article
Language:English
Subjects:
Capacitance
Controllability
Diodes
Electric variables
Electromagnetic interference
Electromagnetic interference (EMI) noise
Industry Applications Society
Insulated gate bipolar transistors
Miller capacitance
Noise level
Noise reduction
Power dissipation
reverse-recovery {d}V/{d}t
turn-on {d}i/{d}t controllability
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Summary:This paper presents the enhanced characteristics of a newly developed low-loss and low-noise 1200-V insulated gate bipolar transistor (IGBT) module. In order to realize low-noise emission, it is necessary not only to improve the reverse recovery characteristics of the free wheeling diode (FWD) but also to reduce the low-current turn-on dI C /dt of the IGBT. The new IGBTs with high turn-on dI C /dt controllability and low turn-on power dissipation have been successfully developed by the reduction of Miller capacitance resulting from an optimization of the surface. The 1200-V 450-A IGBT module utilizing the new IGBT and optimized FWD chips has been able to realize 30% reduction of the switching power dissipation when compared to the conventional IGBT module under the operating condition to set the same noise emission level
ISSN:0093-9994
1939-9367
DOI:10.1109/TIA.2006.890024