Electronic Transport Properties of Fe-doped CoSb3 Prepared by Encapsulated Induction Melting

Fe-doped CoSb 3 skutterudites were prepared by encapsulated induction melting and their thermoelectric and electronic transport properties were investigated. The positive signs of Seebeck and Hall coefficients for all Fe-doped specimens revealed that Fe atoms successfully acted as p-type dopants by...

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Bibliographic Details
Main Authors: Kwan-Ho Park, Sin-Wook You, Soon-Chul Ur, Il-Ho Kim
Format: Conference Proceeding
Language:English
Subjects:
Conducting materials
Doping
Electric resistance
Iron
Scattering
Semiconductivity
Semiconductor impurities
Temperature dependence
Thermal conductivity
Thermoelectricity
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Summary:Fe-doped CoSb 3 skutterudites were prepared by encapsulated induction melting and their thermoelectric and electronic transport properties were investigated. The positive signs of Seebeck and Hall coefficients for all Fe-doped specimens revealed that Fe atoms successfully acted as p-type dopants by substituting Co atoms. Carrier concentration increased with increasing the Fe doping content and the Fe dopants could affect the electronic structure of CoSb 3 and generate excess holes. However, carrier mobility decreased with increasing the doping content, which indicates that the hole mean free path was reduced by the impurity scattering. Seebeck coefficient and electrical resistivity were almost independent of carrier concentration between 5.1times10 18 and 1.2times10 20 /cm 3 because the increase in carrier concentration by doping was competitive with the decrease in carrier mobility by the impurity scattering. Seebeck coefficient showed a positive value at all temperatures examined and it increased as the temperature increased. Temperature dependence of electrical resistivity suggested that Co 1-x Fe x Sb 3 is a highly degenerate semiconducting material. Thermal conductivity was considerably reduced by Fe doping and the lattice contribution was dominant in the Fe-doped CoSb 3 skutterudites
ISSN:1094-2734
DOI:10.1109/ICT.2006.331308