De-embedding Techniques on a 0.25 μm Digital CMOS Process

Fully intregrated radio frequency circuits require the use of several passive devices. In designing these circuits, there is a need to know how these circuit elements behave. Inductors implemented on silicon are not easily characterized compared to their discrete counterparts. On-wafer measurement i...

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Bibliographic Details
Main Authors: Rosales, M.D., Alarcon, L.P., Sabido, D.J.
Format: Conference Proceeding
Language:English
Subjects:
Calibration
Circuits
CMOS process
de-embedding
Fixtures
Inductors
Joining processes
monolithic spiral inductors
on-chip measurement
Probes
Radio frequency
Silicon
Testing
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Summary:Fully intregrated radio frequency circuits require the use of several passive devices. In designing these circuits, there is a need to know how these circuit elements behave. Inductors implemented on silicon are not easily characterized compared to their discrete counterparts. On-wafer measurement is necessary to understand the characteristics of these inductors that are implemented on silicon. This will give a better insight in the design of RF circuit that will utilize these components. In this study, several inductor structures were fabricated on a 0.25 μm CMOS process which will serve as the device under test (DUT). Open, Short1, Short2 and Thru structures were also implemented to characterize the different OPEN and THREE step de-embedding techniques
ISSN:2159-3442
2159-3450
DOI:10.1109/TENCON.2006.344122