Wafer Level Integration of a 24 GHz Differential SiGe-MMIC Oscillator with a Patch Antenna using BCB as a Dielectric Layer

This paper describes the wafer level integration of a differential 24GHz SiGe-MMIC oscillator including a buffer amplifier with a differentially driven patch antenna. The patch antenna is realized on 30μm BCB (Benzo Cyclo Butene) used as a dielectric layer. The radiated power of the patch antenna dr...

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Bibliographic Details
Main Authors: Abele, P., Ojefors, E., Schad, K.-B., Sonmez, E., Trasser, A., Konle, J., Schumacher, H.
Format: Conference Proceeding
Language:English
Subjects:
Capacitors
Dielectrics
Differential amplifiers
Etching
Frequency
Inductors
MMICs
Oscillators
Patch antennas
Silicon
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Summary:This paper describes the wafer level integration of a differential 24GHz SiGe-MMIC oscillator including a buffer amplifier with a differentially driven patch antenna. The patch antenna is realized on 30μm BCB (Benzo Cyclo Butene) used as a dielectric layer. The radiated power of the patch antenna driven by the oscillator is calculated based on measurements and the result is discussed.
DOI:10.1109/EUMA.2003.340948