Design of AND and NAND Logic Gate Using NDR-BASED Circuit Suitable for CMOS Process

AND and NAND logic gate based on the negative differential resistance (NDR) device is demonstrated. This NDR device is made of metal-oxide-semiconductor field-effect-transistor (MOS) devices that could exhibit the NDR characteristic in the current-voltage curve by suitably arranging the MOS paramete...

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Bibliographic Details
Main Authors: Dong-Shong Liang, Cheng-Chi Tai, Kwang-Jow Gan, Cher-Shiung Tsai, Yaw-Hwang Chen
Format: Conference Proceeding
Language:English
Subjects:
Circuit simulation
CMOS logic circuits
CMOS process
Logic circuits
Logic design
Logic devices
Logic gates
MOS devices
Switches
Voltage control
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Summary:AND and NAND logic gate based on the negative differential resistance (NDR) device is demonstrated. This NDR device is made of metal-oxide-semiconductor field-effect-transistor (MOS) devices that could exhibit the NDR characteristic in the current-voltage curve by suitably arranging the MOS parameters. The devices and circuits are implemented by the standard 0.35mum CMOS process
DOI:10.1109/APCCAS.2006.342428