Loading…
DFB lasers integrated with Mach-Zehnder optical modulator fabricated by selective area growth MOVPE technique
The first monolithically integrated DFB laser/Mach-Zehnder interferometric modulator fabricated by the selective area low pressure MOVPE growth technique is reported. A near 3-dB power divider at the Y-branches of the interferometer has been reproducibly achieved by a photolithographically defined d...
Saved in:
Published in: | IEEE photonics technology letters 1995-09, Vol.7 (9), p.1019-1021 |
---|---|
Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | cdi_FETCH-LOGICAL-c308t-5c142e82bbb6ccbcd38f87b6003fddc7d56a6f7da3cd0eb7e5ee0f62310de92d3 |
---|---|
cites | cdi_FETCH-LOGICAL-c308t-5c142e82bbb6ccbcd38f87b6003fddc7d56a6f7da3cd0eb7e5ee0f62310de92d3 |
container_end_page | 1021 |
container_issue | 9 |
container_start_page | 1019 |
container_title | IEEE photonics technology letters |
container_volume | 7 |
creator | Tanbun-Ek, T. Sciortino, P.F. Sergent, A.M. Wecht, K.W. Wisk, P. Chen, Y.K. Bethea, C.G. Sputz, S.K. |
description | The first monolithically integrated DFB laser/Mach-Zehnder interferometric modulator fabricated by the selective area low pressure MOVPE growth technique is reported. A near 3-dB power divider at the Y-branches of the interferometer has been reproducibly achieved by a photolithographically defined dielectric mask used in the selective area growth technology and confirmed by an infrared near field imaging technique. A modulation depth of over 12 dB was achieved both in the forward and reverse bias to the arms of the phase modulator.< > |
doi_str_mv | 10.1109/68.414688 |
format | article |
fullrecord | <record><control><sourceid>proquest_ieee_</sourceid><recordid>TN_cdi_ieee_primary_414688</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>414688</ieee_id><sourcerecordid>28248507</sourcerecordid><originalsourceid>FETCH-LOGICAL-c308t-5c142e82bbb6ccbcd38f87b6003fddc7d56a6f7da3cd0eb7e5ee0f62310de92d3</originalsourceid><addsrcrecordid>eNqF0D1PwzAQBmALgUQpDKxMnpAYUuzYcdwRSgtIRWUABpbIsS-NUT6K7VL135MoFSvTvbp7dCcdQpeUTCgl01shJ5xyIeURGtEppxGhKT_uMukypSw5RWfefxFCecL4CNUPi3tcKQ_OY9sEWDsVwOCdDSV-UbqMPqFsDDjcboLVqsJ1a7aVCq3Dhcpd1-p5vsceKtDB_gBWDhReu3bXr1h9vM5xAF029nsL5-ikUJWHi0Mdo_fF_G32FC1Xj8-zu2WkGZEhSjTlMcg4z3Ohda4Nk4VMc0EIK4zRqUmEEkVqFNOGQJ5CAkAKETNKDExjw8boeti7cW131oestl5DVakG2q3PYhlzmZD0f5gyThnt4c0AtWu9d1BkG2dr5fYZJVn_-UzIbPh8Z68GawHgzx2Gv7daf-w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27341317</pqid></control><display><type>article</type><title>DFB lasers integrated with Mach-Zehnder optical modulator fabricated by selective area growth MOVPE technique</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Tanbun-Ek, T. ; Sciortino, P.F. ; Sergent, A.M. ; Wecht, K.W. ; Wisk, P. ; Chen, Y.K. ; Bethea, C.G. ; Sputz, S.K.</creator><creatorcontrib>Tanbun-Ek, T. ; Sciortino, P.F. ; Sergent, A.M. ; Wecht, K.W. ; Wisk, P. ; Chen, Y.K. ; Bethea, C.G. ; Sputz, S.K.</creatorcontrib><description>The first monolithically integrated DFB laser/Mach-Zehnder interferometric modulator fabricated by the selective area low pressure MOVPE growth technique is reported. A near 3-dB power divider at the Y-branches of the interferometer has been reproducibly achieved by a photolithographically defined dielectric mask used in the selective area growth technology and confirmed by an infrared near field imaging technique. A modulation depth of over 12 dB was achieved both in the forward and reverse bias to the arms of the phase modulator.< ></description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/68.414688</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>IEEE</publisher><subject>Dielectrics ; Epitaxial growth ; Epitaxial layers ; Infrared imaging ; Integrated optics ; Optical imaging ; Optical interferometry ; Optical modulation ; Phase modulation ; Power dividers</subject><ispartof>IEEE photonics technology letters, 1995-09, Vol.7 (9), p.1019-1021</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c308t-5c142e82bbb6ccbcd38f87b6003fddc7d56a6f7da3cd0eb7e5ee0f62310de92d3</citedby><cites>FETCH-LOGICAL-c308t-5c142e82bbb6ccbcd38f87b6003fddc7d56a6f7da3cd0eb7e5ee0f62310de92d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/414688$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Tanbun-Ek, T.</creatorcontrib><creatorcontrib>Sciortino, P.F.</creatorcontrib><creatorcontrib>Sergent, A.M.</creatorcontrib><creatorcontrib>Wecht, K.W.</creatorcontrib><creatorcontrib>Wisk, P.</creatorcontrib><creatorcontrib>Chen, Y.K.</creatorcontrib><creatorcontrib>Bethea, C.G.</creatorcontrib><creatorcontrib>Sputz, S.K.</creatorcontrib><title>DFB lasers integrated with Mach-Zehnder optical modulator fabricated by selective area growth MOVPE technique</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>The first monolithically integrated DFB laser/Mach-Zehnder interferometric modulator fabricated by the selective area low pressure MOVPE growth technique is reported. A near 3-dB power divider at the Y-branches of the interferometer has been reproducibly achieved by a photolithographically defined dielectric mask used in the selective area growth technology and confirmed by an infrared near field imaging technique. A modulation depth of over 12 dB was achieved both in the forward and reverse bias to the arms of the phase modulator.< ></description><subject>Dielectrics</subject><subject>Epitaxial growth</subject><subject>Epitaxial layers</subject><subject>Infrared imaging</subject><subject>Integrated optics</subject><subject>Optical imaging</subject><subject>Optical interferometry</subject><subject>Optical modulation</subject><subject>Phase modulation</subject><subject>Power dividers</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNqF0D1PwzAQBmALgUQpDKxMnpAYUuzYcdwRSgtIRWUABpbIsS-NUT6K7VL135MoFSvTvbp7dCcdQpeUTCgl01shJ5xyIeURGtEppxGhKT_uMukypSw5RWfefxFCecL4CNUPi3tcKQ_OY9sEWDsVwOCdDSV-UbqMPqFsDDjcboLVqsJ1a7aVCq3Dhcpd1-p5vsceKtDB_gBWDhReu3bXr1h9vM5xAF029nsL5-ikUJWHi0Mdo_fF_G32FC1Xj8-zu2WkGZEhSjTlMcg4z3Ohda4Nk4VMc0EIK4zRqUmEEkVqFNOGQJ5CAkAKETNKDExjw8boeti7cW131oestl5DVakG2q3PYhlzmZD0f5gyThnt4c0AtWu9d1BkG2dr5fYZJVn_-UzIbPh8Z68GawHgzx2Gv7daf-w</recordid><startdate>19950901</startdate><enddate>19950901</enddate><creator>Tanbun-Ek, T.</creator><creator>Sciortino, P.F.</creator><creator>Sergent, A.M.</creator><creator>Wecht, K.W.</creator><creator>Wisk, P.</creator><creator>Chen, Y.K.</creator><creator>Bethea, C.G.</creator><creator>Sputz, S.K.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19950901</creationdate><title>DFB lasers integrated with Mach-Zehnder optical modulator fabricated by selective area growth MOVPE technique</title><author>Tanbun-Ek, T. ; Sciortino, P.F. ; Sergent, A.M. ; Wecht, K.W. ; Wisk, P. ; Chen, Y.K. ; Bethea, C.G. ; Sputz, S.K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c308t-5c142e82bbb6ccbcd38f87b6003fddc7d56a6f7da3cd0eb7e5ee0f62310de92d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Dielectrics</topic><topic>Epitaxial growth</topic><topic>Epitaxial layers</topic><topic>Infrared imaging</topic><topic>Integrated optics</topic><topic>Optical imaging</topic><topic>Optical interferometry</topic><topic>Optical modulation</topic><topic>Phase modulation</topic><topic>Power dividers</topic><toplevel>online_resources</toplevel><creatorcontrib>Tanbun-Ek, T.</creatorcontrib><creatorcontrib>Sciortino, P.F.</creatorcontrib><creatorcontrib>Sergent, A.M.</creatorcontrib><creatorcontrib>Wecht, K.W.</creatorcontrib><creatorcontrib>Wisk, P.</creatorcontrib><creatorcontrib>Chen, Y.K.</creatorcontrib><creatorcontrib>Bethea, C.G.</creatorcontrib><creatorcontrib>Sputz, S.K.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tanbun-Ek, T.</au><au>Sciortino, P.F.</au><au>Sergent, A.M.</au><au>Wecht, K.W.</au><au>Wisk, P.</au><au>Chen, Y.K.</au><au>Bethea, C.G.</au><au>Sputz, S.K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>DFB lasers integrated with Mach-Zehnder optical modulator fabricated by selective area growth MOVPE technique</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>1995-09-01</date><risdate>1995</risdate><volume>7</volume><issue>9</issue><spage>1019</spage><epage>1021</epage><pages>1019-1021</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>The first monolithically integrated DFB laser/Mach-Zehnder interferometric modulator fabricated by the selective area low pressure MOVPE growth technique is reported. A near 3-dB power divider at the Y-branches of the interferometer has been reproducibly achieved by a photolithographically defined dielectric mask used in the selective area growth technology and confirmed by an infrared near field imaging technique. A modulation depth of over 12 dB was achieved both in the forward and reverse bias to the arms of the phase modulator.< ></abstract><pub>IEEE</pub><doi>10.1109/68.414688</doi><tpages>3</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 1041-1135 |
ispartof | IEEE photonics technology letters, 1995-09, Vol.7 (9), p.1019-1021 |
issn | 1041-1135 1941-0174 |
language | eng |
recordid | cdi_ieee_primary_414688 |
source | IEEE Electronic Library (IEL) Journals |
subjects | Dielectrics Epitaxial growth Epitaxial layers Infrared imaging Integrated optics Optical imaging Optical interferometry Optical modulation Phase modulation Power dividers |
title | DFB lasers integrated with Mach-Zehnder optical modulator fabricated by selective area growth MOVPE technique |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T05%3A00%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=DFB%20lasers%20integrated%20with%20Mach-Zehnder%20optical%20modulator%20fabricated%20by%20selective%20area%20growth%20MOVPE%20technique&rft.jtitle=IEEE%20photonics%20technology%20letters&rft.au=Tanbun-Ek,%20T.&rft.date=1995-09-01&rft.volume=7&rft.issue=9&rft.spage=1019&rft.epage=1021&rft.pages=1019-1021&rft.issn=1041-1135&rft.eissn=1941-0174&rft.coden=IPTLEL&rft_id=info:doi/10.1109/68.414688&rft_dat=%3Cproquest_ieee_%3E28248507%3C/proquest_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c308t-5c142e82bbb6ccbcd38f87b6003fddc7d56a6f7da3cd0eb7e5ee0f62310de92d3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=27341317&rft_id=info:pmid/&rft_ieee_id=414688&rfr_iscdi=true |