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A Formation of Si Native Oxide Membrane Using High-Selectivity Etching and Applications for Nano-Pipe Array and Micro-Diaphragm on Si Substrate
A novel technique in creating a cavity by using a membrane of Si-native oxide has been developed. The membrane of Si-native oxide was formed by high-selectivity Cl 2 etching of Si which surface was treated by wet chemicals. Following film deposition onto the membrane which was supported by SiO 2 mas...
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creator | Sugino, R. Ito, T. |
description | A novel technique in creating a cavity by using a membrane of Si-native oxide has been developed. The membrane of Si-native oxide was formed by high-selectivity Cl 2 etching of Si which surface was treated by wet chemicals. Following film deposition onto the membrane which was supported by SiO 2 mask can make a cavity in the substrate. The advantage of this technique is its ability to maintain the CD of cavity even after film deposition to seal the via-opening |
doi_str_mv | 10.1109/IEDM.2006.346831 |
format | conference_proceeding |
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The membrane of Si-native oxide was formed by high-selectivity Cl 2 etching of Si which surface was treated by wet chemicals. Following film deposition onto the membrane which was supported by SiO 2 mask can make a cavity in the substrate. 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The membrane of Si-native oxide was formed by high-selectivity Cl 2 etching of Si which surface was treated by wet chemicals. Following film deposition onto the membrane which was supported by SiO 2 mask can make a cavity in the substrate. The advantage of this technique is its ability to maintain the CD of cavity even after film deposition to seal the via-opening</description><subject>Biomembranes</subject><subject>Chemicals</subject><subject>Resists</subject><subject>Scanning electron microscopy</subject><subject>Semiconductor films</subject><subject>Substrates</subject><subject>Surface treatment</subject><subject>Temperature</subject><subject>Visualization</subject><subject>Wet etching</subject><issn>0163-1918</issn><issn>2156-017X</issn><isbn>142440438X</isbn><isbn>9781424404384</isbn><isbn>9781424404391</isbn><isbn>1424404398</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNo1jV1PwjAYhetXIiD3Jt70DxTfru22XhIEIQExmSbcka57BzXsI9008iv8y07Uq5OT5-Q5hNxyGHEO-n4xfViNAoBwJGQYC35GhjqKuQykBCk0Pye9gKuQAY82F6T_D-LNJekBDwXjmsfXpN80bwBBpLTqka8xnVW-MK2rSlrlNHH0qSsfSNefLkO6wiL1pkT62rhyR-dut2cJHtB2G9ce6bS1-x9gyoyO6_rg7EnV0Lzynams2LOrkY69N8fTaOWsr9iDM_Xem11Bu9vuM3lPm9abFm_IVW4ODQ7_ckCS2fRlMmfL9eNiMl4yp6FlqdIorBEpKhNxzGSqlcQ0E3GmFVcgOdiowzLOY5WFAUQSIMpzm4KN80AMyN2v1SHitvauMP64lVzJQIH4BqltaLQ</recordid><startdate>200612</startdate><enddate>200612</enddate><creator>Sugino, R.</creator><creator>Ito, T.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200612</creationdate><title>A Formation of Si Native Oxide Membrane Using High-Selectivity Etching and Applications for Nano-Pipe Array and Micro-Diaphragm on Si Substrate</title><author>Sugino, R. ; Ito, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-b59e3ca3be5a71ed4b954ebd38d95150410c7a3b48f85d62074007ffcb0c8f23</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Biomembranes</topic><topic>Chemicals</topic><topic>Resists</topic><topic>Scanning electron microscopy</topic><topic>Semiconductor films</topic><topic>Substrates</topic><topic>Surface treatment</topic><topic>Temperature</topic><topic>Visualization</topic><topic>Wet etching</topic><toplevel>online_resources</toplevel><creatorcontrib>Sugino, R.</creatorcontrib><creatorcontrib>Ito, T.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sugino, R.</au><au>Ito, T.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A Formation of Si Native Oxide Membrane Using High-Selectivity Etching and Applications for Nano-Pipe Array and Micro-Diaphragm on Si Substrate</atitle><btitle>2006 International Electron Devices Meeting</btitle><stitle>IEDM</stitle><date>2006-12</date><risdate>2006</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>0163-1918</issn><eissn>2156-017X</eissn><isbn>142440438X</isbn><isbn>9781424404384</isbn><eisbn>9781424404391</eisbn><eisbn>1424404398</eisbn><abstract>A novel technique in creating a cavity by using a membrane of Si-native oxide has been developed. The membrane of Si-native oxide was formed by high-selectivity Cl 2 etching of Si which surface was treated by wet chemicals. Following film deposition onto the membrane which was supported by SiO 2 mask can make a cavity in the substrate. The advantage of this technique is its ability to maintain the CD of cavity even after film deposition to seal the via-opening</abstract><pub>IEEE</pub><doi>10.1109/IEDM.2006.346831</doi><tpages>4</tpages></addata></record> |
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ispartof | 2006 International Electron Devices Meeting, 2006, p.1-4 |
issn | 0163-1918 2156-017X |
language | eng |
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source | IEEE Xplore All Conference Series |
subjects | Biomembranes Chemicals Resists Scanning electron microscopy Semiconductor films Substrates Surface treatment Temperature Visualization Wet etching |
title | A Formation of Si Native Oxide Membrane Using High-Selectivity Etching and Applications for Nano-Pipe Array and Micro-Diaphragm on Si Substrate |
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