Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling

A new mobility degradation specific to short channel MOSFETs is studied and elucidated. Pocket implants/dopants pile-up, interface states/oxide charges, remote Coulomb scattering or ballisticity are insufficient to explain this degradation. The role of non-Coulombian (neutral) defects, which can be...

Full description

Saved in:
Bibliographic Details
Main Authors: Cros, A., Romanjek, K., Fleury, D., Harrison, S., Cerutti, R., Coronel, P., Dumont, B., Pouydebasque, A., Wacquez, R., Duriez, B., Gwoziecki, R., Boeuf, F., Brut, H., Ghibaudo, G., Skotnicki, T.
Format: Conference Proceeding
Language:eng ; jpn
Subjects:
Degradation
Doping
Electron mobility
Implants
Magnetic field measurement
MOSFETs
Performance evaluation
Scattering
Temperature
Thin film transistors
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A new mobility degradation specific to short channel MOSFETs is studied and elucidated. Pocket implants/dopants pile-up, interface states/oxide charges, remote Coulomb scattering or ballisticity are insufficient to explain this degradation. The role of non-Coulombian (neutral) defects, which can be healed by increasing the annealing temperature, is evidenced
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2006.346872