Direct Silicon Bonded (DSB) Substrate Solid Phase Epitaxy (SPE) Integration Scheme Study for High Performance Bulk CMOS

Two integration schemes for hybrid crystal orientation technology using direct silicon bonded (DSB) substrates and solid phase epitaxy (SPE) processes have been implemented. The shallow-trench-isolation (STI) before SPE approach suffers from trench-edge defects formed at STI edges, which causes high...

Full description

Saved in:
Bibliographic Details
Main Authors: Haizhou Yin, Sung, C.Y., Ng, H., Saenger, K.L., Chan, V., Crowder, S., Zhang, R., Li, J., Ott, J.A., Pfeiffer, G., Bendernagel, R., Ko, S.B., Ren, Z., Chen, X., Wang, G., Liu, J., Cheng, K., Mesfin, A., Kelly, R., Ku, V., Luo, Z.J., Rovedo, N., Fogel, K., Sadana, D.K., Khare, M., Shahidi, G.
Format: Conference Proceeding
Language:English
Subjects:
Bonding
CMOS process
CMOS technology
Epitaxial growth
Implants
Leakage current
Semiconductor films
Silicon
Solids
Substrates
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Two integration schemes for hybrid crystal orientation technology using direct silicon bonded (DSB) substrates and solid phase epitaxy (SPE) processes have been implemented. The shallow-trench-isolation (STI) before SPE approach suffers from trench-edge defects formed at STI edges, which causes high leakage current. The SPE-before-STI approach allows removal of edge defects of SPE by STI. SRAM in 65nm node and eDRAM in 90nm node have been demonstrated on DSB using the SPE-before-STI scheme
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2006.346962