Comprehensive Study on Injection Velocity Enhancement in Dopant-Segregated Schottky MOSFETs

The carrier transport in dopant-segregated Schottky (DSS) and conventional MOSFETs was thoroughly investigated in terms of carrier injection velocity, v inj . It was found that v inj enhancement associated with the velocity overshoot enhances the current drivability in DSS, in addition to the reduct...

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Bibliographic Details
Main Authors: Kinoshita, A., Kinoshita, T., Nishi, Y., Uchida, K., Toriyama, S., Hasumi, R., Koga, J.
Format: Conference Proceeding
Language:English
Subjects:
Capacitive sensors
Charge carrier density
Decision support systems
FinFETs
Hot carrier injection
Laboratories
Large scale integration
MOSFETs
Research and development
Semiconductor process modeling
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Summary:The carrier transport in dopant-segregated Schottky (DSS) and conventional MOSFETs was thoroughly investigated in terms of carrier injection velocity, v inj . It was found that v inj enhancement associated with the velocity overshoot enhances the current drivability in DSS, in addition to the reduction of parasitic resistance. A physical-based model was newly developed to explain the velocity overshoot behavior and reproduced the experimental data very well. Moreover, a novel type of DSS FinFET to take full advantage of the velocity overshoot was proposed and demonstrated as a primary study
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2006.346963