Noble High Density Probe Memory using Ferroelectric Media beyond Sub-10 nm Generation

Feasibility of high density probe-based memory with polycrystalline ferroelectric media has been demonstrated for next memory applications beyond sub-10 nm generation. Noble chemical-mechanical-polishing (CMP) method was employed to fabricate a very even surface on polycrystalline MOCVD Pb(Zr,Ti)O 3...

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Bibliographic Details
Main Authors: Yoo, D.C., Lee, C.M., Bae, B.J., Kim, L.S., Heo, J.E., Im, D.H., Choi, S.H., Park, S.O., Kim, H.S., U-In Chung, Moon, J.T., Ryu, B.I., Kim, D.J., Noh, T.W.
Format: Conference Proceeding
Language:English
Subjects:
Crystalline materials
Ferroelectric films
Ferroelectric materials
Grain boundaries
Magnetic materials
MOCVD
Probes
Rough surfaces
Surface morphology
Surface roughness
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Summary:Feasibility of high density probe-based memory with polycrystalline ferroelectric media has been demonstrated for next memory applications beyond sub-10 nm generation. Noble chemical-mechanical-polishing (CMP) method was employed to fabricate a very even surface on polycrystalline MOCVD Pb(Zr,Ti)O 3 (PZT) media. On the CMP processed PZT media, domain dot array was able to be written and read even at grain boundary region by PFM technique. Moreover, 15 nm-sized domain dot was successfully demonstrated on 50 nm-thick PZT media. Also for the first time, we successfully demonstrated that the polycrystalline ultra thin 7 nm-thick PZT media has good ferroelectric properties
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2006.346985