Thyristor High-Frequency Ratings by Concurrent Testing and Computer Simu1ation

A new concurrent test method is described to verify the thyristor high-frequency capability and also describe a digital computer thyristor simulation program which accounts for the many variables of high-frequency applications. The thyristor model will be described in detail along with the method by...

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Bibliographic Details
Published in:IEEE transactions on industry applications 1973-03, Vol.IA-9 (2), p.227-235
Main Authors: Balenovich, J. Dennis, Gillott, David M., Motto, John W.
Format: Article
Language:English
Subjects:
Anodes
Application software
Computer simulation
Concurrent computing
Frequency
Semiconductor device testing
Space vector pulse width modulation
Switches
Thyristors
Voltage
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Description
Summary:A new concurrent test method is described to verify the thyristor high-frequency capability and also describe a digital computer thyristor simulation program which accounts for the many variables of high-frequency applications. The thyristor model will be described in detail along with the method by which the model is aligned to the empirical concurrent test of the device. A sensitivity analysis will be presented to give the percent change in thyristor high-frequency capability due to changing other variables such as delay time of anode current, the RC dv/dt network and gate drive for standard (non-di/namic gage) devices.
ISSN:0093-9994
1939-9367
DOI:10.1109/TIA.1973.349957