Strong Efficiency Improvement of SOI-LEDs Through Carrier Confinement

Contemporary silicon light-emitting diodes in silicon-on-insulator (SOI) technology suffer from poor efficiency compared to their bulk-silicon counterparts. In this letter, we present a new device structure where the carrier injection takes place through silicon slabs of only a few nanometer thick....

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Bibliographic Details
Published in:IEEE electron device letters 2007-05, Vol.28 (5), p.383-385
Main Authors: Tu Hoang, Phuong LeMinh, Holleman, J., Schmitz, J.
Format: Article
Language:English
Subjects:
Applied sciences
Cameras
Carrier confinement
Carriers
Circuit properties
Confinement
Confining
Contacts
Devices
Diodes
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Infrared
Integrated optics
Integrated optics. Optical fibers and wave guides
integrated optoelectronics
Integrated optoelectronics. Optoelectronic circuits
Light emitting diodes
Light sources
light-emitting diodes (LEDs)
luminescent devices
Optical and optoelectronic circuits
Optoelectronic devices
Oxidation
Radiative recombination
semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Silicon
Silicon on insulator technology
silicon-on-insulator (SOI) technology
Very large scale integration
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Summary:Contemporary silicon light-emitting diodes in silicon-on-insulator (SOI) technology suffer from poor efficiency compared to their bulk-silicon counterparts. In this letter, we present a new device structure where the carrier injection takes place through silicon slabs of only a few nanometer thick. Its external quantum efficiency of 1.4middot10 -4 at room temperature, with a spectrum peaking at 1130 nm, is almost two orders higher than reported thus far on SOI. The structure diminishes the dominant role of nonradiative recombination at the n + and p + contacts, by confining the injected carriers in an SOI peninsula. With this approach, a compact infrared light source can be fabricated using standard semiconductor processing steps
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.895415