Loading…
NEMS Devices for Accelerometers Compatible with Thin SOI Technology
The paper presents thin SOI NEMS structures for accelerometers based on thin SOI technology and compatible with "in-IC" integration. Modeling of Casimir force, design of accelerometers, improvement of hybrid e-beam/DUV lithography and FH-vapor release, development of specific AFM character...
Saved in:
Main Authors: | , , , , , , , , , , , |
---|---|
Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | |
---|---|
cites | |
container_end_page | 185 |
container_issue | |
container_start_page | 180 |
container_title | |
container_volume | |
creator | Oiller, E. Duraffourg, L. Delaye, M.T. Grange, H. Deneuville, S. Bernos, J. Dianoux, R. Marchi, F. Renaud, D. Baron, T. Andreucci, P. Robert, P. |
description | The paper presents thin SOI NEMS structures for accelerometers based on thin SOI technology and compatible with "in-IC" integration. Modeling of Casimir force, design of accelerometers, improvement of hybrid e-beam/DUV lithography and FH-vapor release, development of specific AFM characterizations have allowed to fabricate NEMS devices and to provide AFM characterizations. |
doi_str_mv | 10.1109/NEMS.2007.352257 |
format | conference_proceeding |
fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4160560</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4160560</ieee_id><sourcerecordid>4160560</sourcerecordid><originalsourceid>FETCH-LOGICAL-h1667-f8be6d8ef652bdbbaa2adbfccf3c4eaf17fa6255ecc2089c9a5a645d02968fe3</originalsourceid><addsrcrecordid>eNotjEFLwzAYQAMiTGbvwi75A61f0uRrcxx16mC6w3ofSfrFRtp1tEXZv1eZ7_JO7zH2ICATAszj--btkEmAIsu1lLq4YYkpSqGkUoAC1IIl0_QJv-RGo9Z3rPpL-BN9RU8TD8PI195TR-PQ00zjxKuhP9s5uo74d5xbXrfxxA_7La_Jt6ehGz4u9-w22G6i5N9LVj9v6uo13e1fttV6l7YCsUhD6QibkgJq6RrnrJW2ccH7kHtFNogiWJRak_cSSuON1RaVbkAaLAPlS7a6biMRHc9j7O14OSqBoBHyH-uGSa8</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>NEMS Devices for Accelerometers Compatible with Thin SOI Technology</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Oiller, E. ; Duraffourg, L. ; Delaye, M.T. ; Grange, H. ; Deneuville, S. ; Bernos, J. ; Dianoux, R. ; Marchi, F. ; Renaud, D. ; Baron, T. ; Andreucci, P. ; Robert, P.</creator><creatorcontrib>Oiller, E. ; Duraffourg, L. ; Delaye, M.T. ; Grange, H. ; Deneuville, S. ; Bernos, J. ; Dianoux, R. ; Marchi, F. ; Renaud, D. ; Baron, T. ; Andreucci, P. ; Robert, P.</creatorcontrib><description>The paper presents thin SOI NEMS structures for accelerometers based on thin SOI technology and compatible with "in-IC" integration. Modeling of Casimir force, design of accelerometers, improvement of hybrid e-beam/DUV lithography and FH-vapor release, development of specific AFM characterizations have allowed to fabricate NEMS devices and to provide AFM characterizations.</description><identifier>ISBN: 9781424406104</identifier><identifier>ISBN: 1424406102</identifier><identifier>ISBN: 1424406099</identifier><identifier>ISBN: 9781424406098</identifier><identifier>DOI: 10.1109/NEMS.2007.352257</identifier><language>eng</language><publisher>IEEE</publisher><subject>accelerometer ; Accelerometers ; CMOS technology ; Costs ; Delay ; integration ; Micromechanical devices ; Nanoelectromechanical systems ; Nanoscale devices ; NEMS ; Paper technology ; Resonance ; Silicon ; SOI</subject><ispartof>2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2007, p.180-185</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4160560$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4160560$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Oiller, E.</creatorcontrib><creatorcontrib>Duraffourg, L.</creatorcontrib><creatorcontrib>Delaye, M.T.</creatorcontrib><creatorcontrib>Grange, H.</creatorcontrib><creatorcontrib>Deneuville, S.</creatorcontrib><creatorcontrib>Bernos, J.</creatorcontrib><creatorcontrib>Dianoux, R.</creatorcontrib><creatorcontrib>Marchi, F.</creatorcontrib><creatorcontrib>Renaud, D.</creatorcontrib><creatorcontrib>Baron, T.</creatorcontrib><creatorcontrib>Andreucci, P.</creatorcontrib><creatorcontrib>Robert, P.</creatorcontrib><title>NEMS Devices for Accelerometers Compatible with Thin SOI Technology</title><title>2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems</title><addtitle>NEMS</addtitle><description>The paper presents thin SOI NEMS structures for accelerometers based on thin SOI technology and compatible with "in-IC" integration. Modeling of Casimir force, design of accelerometers, improvement of hybrid e-beam/DUV lithography and FH-vapor release, development of specific AFM characterizations have allowed to fabricate NEMS devices and to provide AFM characterizations.</description><subject>accelerometer</subject><subject>Accelerometers</subject><subject>CMOS technology</subject><subject>Costs</subject><subject>Delay</subject><subject>integration</subject><subject>Micromechanical devices</subject><subject>Nanoelectromechanical systems</subject><subject>Nanoscale devices</subject><subject>NEMS</subject><subject>Paper technology</subject><subject>Resonance</subject><subject>Silicon</subject><subject>SOI</subject><isbn>9781424406104</isbn><isbn>1424406102</isbn><isbn>1424406099</isbn><isbn>9781424406098</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotjEFLwzAYQAMiTGbvwi75A61f0uRrcxx16mC6w3ofSfrFRtp1tEXZv1eZ7_JO7zH2ICATAszj--btkEmAIsu1lLq4YYkpSqGkUoAC1IIl0_QJv-RGo9Z3rPpL-BN9RU8TD8PI195TR-PQ00zjxKuhP9s5uo74d5xbXrfxxA_7La_Jt6ehGz4u9-w22G6i5N9LVj9v6uo13e1fttV6l7YCsUhD6QibkgJq6RrnrJW2ccH7kHtFNogiWJRak_cSSuON1RaVbkAaLAPlS7a6biMRHc9j7O14OSqBoBHyH-uGSa8</recordid><startdate>200701</startdate><enddate>200701</enddate><creator>Oiller, E.</creator><creator>Duraffourg, L.</creator><creator>Delaye, M.T.</creator><creator>Grange, H.</creator><creator>Deneuville, S.</creator><creator>Bernos, J.</creator><creator>Dianoux, R.</creator><creator>Marchi, F.</creator><creator>Renaud, D.</creator><creator>Baron, T.</creator><creator>Andreucci, P.</creator><creator>Robert, P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200701</creationdate><title>NEMS Devices for Accelerometers Compatible with Thin SOI Technology</title><author>Oiller, E. ; Duraffourg, L. ; Delaye, M.T. ; Grange, H. ; Deneuville, S. ; Bernos, J. ; Dianoux, R. ; Marchi, F. ; Renaud, D. ; Baron, T. ; Andreucci, P. ; Robert, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-h1667-f8be6d8ef652bdbbaa2adbfccf3c4eaf17fa6255ecc2089c9a5a645d02968fe3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>accelerometer</topic><topic>Accelerometers</topic><topic>CMOS technology</topic><topic>Costs</topic><topic>Delay</topic><topic>integration</topic><topic>Micromechanical devices</topic><topic>Nanoelectromechanical systems</topic><topic>Nanoscale devices</topic><topic>NEMS</topic><topic>Paper technology</topic><topic>Resonance</topic><topic>Silicon</topic><topic>SOI</topic><toplevel>online_resources</toplevel><creatorcontrib>Oiller, E.</creatorcontrib><creatorcontrib>Duraffourg, L.</creatorcontrib><creatorcontrib>Delaye, M.T.</creatorcontrib><creatorcontrib>Grange, H.</creatorcontrib><creatorcontrib>Deneuville, S.</creatorcontrib><creatorcontrib>Bernos, J.</creatorcontrib><creatorcontrib>Dianoux, R.</creatorcontrib><creatorcontrib>Marchi, F.</creatorcontrib><creatorcontrib>Renaud, D.</creatorcontrib><creatorcontrib>Baron, T.</creatorcontrib><creatorcontrib>Andreucci, P.</creatorcontrib><creatorcontrib>Robert, P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Oiller, E.</au><au>Duraffourg, L.</au><au>Delaye, M.T.</au><au>Grange, H.</au><au>Deneuville, S.</au><au>Bernos, J.</au><au>Dianoux, R.</au><au>Marchi, F.</au><au>Renaud, D.</au><au>Baron, T.</au><au>Andreucci, P.</au><au>Robert, P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>NEMS Devices for Accelerometers Compatible with Thin SOI Technology</atitle><btitle>2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems</btitle><stitle>NEMS</stitle><date>2007-01</date><risdate>2007</risdate><spage>180</spage><epage>185</epage><pages>180-185</pages><isbn>9781424406104</isbn><isbn>1424406102</isbn><isbn>1424406099</isbn><isbn>9781424406098</isbn><abstract>The paper presents thin SOI NEMS structures for accelerometers based on thin SOI technology and compatible with "in-IC" integration. Modeling of Casimir force, design of accelerometers, improvement of hybrid e-beam/DUV lithography and FH-vapor release, development of specific AFM characterizations have allowed to fabricate NEMS devices and to provide AFM characterizations.</abstract><pub>IEEE</pub><doi>10.1109/NEMS.2007.352257</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | ISBN: 9781424406104 |
ispartof | 2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2007, p.180-185 |
issn | |
language | eng |
recordid | cdi_ieee_primary_4160560 |
source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | accelerometer Accelerometers CMOS technology Costs Delay integration Micromechanical devices Nanoelectromechanical systems Nanoscale devices NEMS Paper technology Resonance Silicon SOI |
title | NEMS Devices for Accelerometers Compatible with Thin SOI Technology |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-17T12%3A10%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=NEMS%20Devices%20for%20Accelerometers%20Compatible%20with%20Thin%20SOI%20Technology&rft.btitle=2007%202nd%20IEEE%20International%20Conference%20on%20Nano/Micro%20Engineered%20and%20Molecular%20Systems&rft.au=Oiller,%20E.&rft.date=2007-01&rft.spage=180&rft.epage=185&rft.pages=180-185&rft.isbn=9781424406104&rft.isbn_list=1424406102&rft.isbn_list=1424406099&rft.isbn_list=9781424406098&rft_id=info:doi/10.1109/NEMS.2007.352257&rft_dat=%3Cieee_6IE%3E4160560%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-h1667-f8be6d8ef652bdbbaa2adbfccf3c4eaf17fa6255ecc2089c9a5a645d02968fe3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4160560&rfr_iscdi=true |