A 16Mb toggle MRAM with burst modes

We have developed a 16 Mb toggle MRAM. It has some 100-MHz burst modes that are compatible with a pseudo SRAM even though the toggle cell requires reading and comparing sequences in write modes. To accelerate operating clock frequency, an interleaved and pipelined memory-array group activation schem...

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Bibliographic Details
Main Authors: Sugibayashi, Tadahiko, Sakimura, Noboru, Honda, Takeshi, Nagahara, Kiyokazu, Tsuji, Kiyotaka, Numata, Hideaki, Miura, Sadahiko, Shimura, Ken-ichi, Kato, Yuko, Saito, Shinsaku, Fukumoto, Yoshiyuki, Honjo, Hiroaki, Suzuki, Tetsuhiro, Suemitsu, Katsumi, Mukai, Tomonori, Mori, Kaoru, Nebashi, Ryusuke, Fukami, Shunsuke, Hada, Hiromitsu, Ishiwata, Nobuyuki, Kasai, Naoki, Tahara, Shuichi
Format: Conference Proceeding
Language:English
Subjects:
Acceleration
Buffer storage
Circuits
CMOS process
Laboratories
Magnetooptic recording
Prefetching
Random access memory
Switches
Writing
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Summary:We have developed a 16 Mb toggle MRAM. It has some 100-MHz burst modes that are compatible with a pseudo SRAM even though the toggle cell requires reading and comparing sequences in write modes. To accelerate operating clock frequency, an interleaved and pipelined memory-array group activation scheme and a noise insulation switch scheme have been proposed. The MRAM was fabricated with a 0.13-μm CMOS and 0.24-μm MRAM process with five metal layers.
DOI:10.1109/ASSCC.2006.357910