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Bonding Packaging of a SP4T RF MEMS Switch
A study on bonding packaging of a SP4T series RF MEMS switch with metal-to-metal contact is presented. The switch, with the total die size of 3580mum times 2740mum, consists of a coplanar waveguide (CPW), SiON dielectric bridge membranes and broadside actuation electrodes. In order to protect the mo...
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Main Authors: | , , , , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | A study on bonding packaging of a SP4T series RF MEMS switch with metal-to-metal contact is presented. The switch, with the total die size of 3580mum times 2740mum, consists of a coplanar waveguide (CPW), SiON dielectric bridge membranes and broadside actuation electrodes. In order to protect the movable structures from the mechanical damage as well as the particle contaminations, a high-resistivity silicon cap with a rectangular cavity of 50mum depth is designed, fabricated via etching in KOH solution at 80 degC, and bonded on top of the switch with epoxy resin. The results show the bonding between the cap and the switch support substrate is mechanically robust and the degradation of the isolation is in the range of 5%-10% in the frequency band from 1-10 GHz |
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DOI: | 10.1109/ICEPT.2006.359869 |