A New Asymmetric SRAM Cell to Reduce Soft Errors and Leakage Power in FPGA

Soft errors in semiconductor memories occur due to charged particle strikes at the cell nodes. In this paper, we present a new asymmetric memory cell to increase the soft error tolerance of SRAM. At the same time, this cell can be used at the reduced supply voltage to decrease the leakage power with...

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Bibliographic Details
Main Authors: Gill, B.S., Papachristou, C., Wolff, F.G.
Format: Conference Proceeding
Language:English
Subjects:
Circuits
Computer errors
Error analysis
Field programmable gate arrays
Logic devices
Random access memory
Routing
Space technology
Switches
Voltage
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Summary:Soft errors in semiconductor memories occur due to charged particle strikes at the cell nodes. In this paper, we present a new asymmetric memory cell to increase the soft error tolerance of SRAM. At the same time, this cell can be used at the reduced supply voltage to decrease the leakage power without significantly increasing the soft error rate of SRAM. A major use of this cell is in the configuration memory of FPGA. The cell is designed using a 70nm process technology and verified using Spice simulations. Soft error tolerance results are presented and compared with standard SRAM cell and an existing increased soft error tolerance cell. Simulation results show that our cell has lowest soft error rate at the various supply voltages
ISSN:1530-1591
1558-1101
DOI:10.1109/DATE.2007.364504