Evaluation of SCR-Based ESD Protection Devices in 90nm and 65nm CMOS Technologies

The authors compare a number of promising SCR-based ESD protection devices in 90nm and 65nm CMOS technologies implemented with a consistent layout. The devices are evaluated using ESD metrics such as trigger voltage and current, on-resistance, failure current, turn-on time and DC leakage current. Th...

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Bibliographic Details
Main Authors: Di Sarro, J., Chatty, K., Gauthier, R., Rosenbaum, E.
Format: Conference Proceeding
Language:English
Subjects:
Anodes
Capacitance
Cathodes
CMOS technology
Diodes
Electrostatic discharge
Electrostatic discharge (ESD)
ESD protection circuits
Leakage current
Protection
Silicon Controlled Rectifier (SCR)
Thyristors
Trigger circuits
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Description
Summary:The authors compare a number of promising SCR-based ESD protection devices in 90nm and 65nm CMOS technologies implemented with a consistent layout. The devices are evaluated using ESD metrics such as trigger voltage and current, on-resistance, failure current, turn-on time and DC leakage current. The authors also report that SCR turn-on time is highly dependent on the amplitude of the applied pulse.
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2007.369914