Determination of Intrinsic Spectra from Frontside & Backside Photon Emission Spectroscopy

A model to determine the intrinsic spectra from frontside and backside measured spectra is discussed. The model is then used to derive the intrinsic spectra of a saturated nMOSFET from both front side and backside measured spectra. Although the front side and backside measured spectra differs signif...

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Bibliographic Details
Main Authors: Tan, S.L., Toh, K.H., Chan, D.S.H., Phang, J.C.H., Chua, C.M., Koh, L.S.
Format: Conference Proceeding
Language:English
Subjects:
Dielectric measurements
Electrochemical impedance spectroscopy
Failure analysis
Microscopy
MOSFET circuits
Photonic integrated circuits
Reflectivity
Silicon
Thickness measurement
Wavelength measurement
Online Access:Request full text
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Description
Summary:A model to determine the intrinsic spectra from frontside and backside measured spectra is discussed. The model is then used to derive the intrinsic spectra of a saturated nMOSFET from both front side and backside measured spectra. Although the front side and backside measured spectra differs significantly, the intrinsic spectra derived by the model matches well. This method has also been applied to the case of an emission from nMOSFET due to gate leakage
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2007.369980