Magnetic Shadow RAM

We propose a new shadow RAM circuit, utilizing magnetic tunnel junctions and an independent-double-gate CMOS technology. A shadow RAM combines a conventional static RAM circuit with a non-volatile "shadow", and provides a means to quickly transfer data between them. Non-volatile magnetic s...

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Bibliographic Details
Main Authors: Hass, K.J., Donohoe, G.W., Hong, Y.-K., Choi, B.-C., DeGregorio, K., Hayhurst, R.
Format: Conference Proceeding
Language:English
Subjects:
CMOS technology
Decoding
Embedded computing
Energy consumption
Grid computing
Logic
Magnetic circuits
Magnetic memory
Magnetic tunneling
Physics computing
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Summary:We propose a new shadow RAM circuit, utilizing magnetic tunnel junctions and an independent-double-gate CMOS technology. A shadow RAM combines a conventional static RAM circuit with a non-volatile "shadow", and provides a means to quickly transfer data between them. Non-volatile magnetic storage offers several advantages over current technology for this application, with unlimited write endurance, very fast write time, low power consumption, and improved radiation tolerance. A novel circuit allows the shadow storage to be incorporated into a RAM cell using independent-double- gate transistors. The physical layout of the shadow RAM is unlike bulk MRAM, making it possible to embed the shadow RAM elements into computational logic without the X-Y grid decoding of the cell address. Accordingly, the micromagnetic structures have been optimized for writing with a new "one- wire" technique. We discuss proposed circuits and present circuit simulation results.
DOI:10.1109/NVMT.2006.378874