Band Edge High-κ/Metal Gate n-MOSFETs Using Ultra Thin Capping Layers

Ultra thin layers of Magnesium containing cap layers are deposited on Hf based dielectrics prior to deposition of the TiN/Poly-Si electrode stack [1] to achieve Band-edge (BE) high-κ/metal nMOSFETs with good mobility (190 cm 2 /Vs @ 1 MV/cm) at T inv (1.45 nm), in a gate first process flow. It is sh...

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Bibliographic Details
Main Authors: Paruchuri, V.K., Narayanan, V., Linder, B.P., Brown, S.L., Kim, Y.H., Wang, Y., Ronsheim, P., Jammy, R., Chen, T.C.
Format: Conference Proceeding
Language:English
Subjects:
CMOS technology
Degradation
Electrodes
Electron mobility
Hafnium oxide
High K dielectric materials
High-K gate dielectrics
Jamming
MOSFET circuits
Tin
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Summary:Ultra thin layers of Magnesium containing cap layers are deposited on Hf based dielectrics prior to deposition of the TiN/Poly-Si electrode stack [1] to achieve Band-edge (BE) high-κ/metal nMOSFETs with good mobility (190 cm 2 /Vs @ 1 MV/cm) at T inv (1.45 nm), in a gate first process flow. It is shown that V t can be modulated anywhere between midgap and band edge by changing the cap layer thickness. Short channel devices with band edge characteristics are demonstrated down to 40 nm.
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.2007.378907