Issues associated with p-type band-edge effective work function metal electrodes: Fermi-level pinning and flatband roll-off

Issues associated with the integration of p-type band-edge (5.0~5.2 eV) effective work function (EWF) electrodes are identified and discussed. The Fermi-level (E f ) pinning effect traditionally used to explain the lowering of p-MOS EWF is believed not to be an intrinsic limitation. However, a new d...

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Main Authors: Huang-Chun Wen, Kisik Choi, Park, C.S., Majhi, P., Harris, H.R., Niimi, H., Hong-Bae Park, Bersuker, G., Lysaght, P., Kwong, D.L., Song, S.C., Byoung Hun Lee, Jammy, R.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Conducting materials
Drives
Electrodes
High K dielectric materials
High-K gate dielectrics
Inorganic materials
Instruments
Jamming
Time of arrival estimation
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Summary:Issues associated with the integration of p-type band-edge (5.0~5.2 eV) effective work function (EWF) electrodes are identified and discussed. The Fermi-level (E f ) pinning effect traditionally used to explain the lowering of p-MOS EWF is believed not to be an intrinsic limitation. However, a new described as the "flatband (V fb ,) rolloff effect" is shown to be the dominant factor.
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.2007.378910