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Performances of GeSnSbTe Material for High-Speed Phase Change Memory
In this paper, a new application of phase change material GeSnSbTe (GSST) is proposed for high-speed phase-change memory (PCM). The device characteristics of PCM employing GeSnSbTe and conventional Ge 2 Sb 2 Te 5 (GST) are compared. Because of high crystallization speed, the GSST device demonstrates...
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Main Authors: | , , , , , , , , , , , , |
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Format: | Conference Proceeding |
Language: | eng ; jpn |
Subjects: | |
Online Access: | Request full text |
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Summary: | In this paper, a new application of phase change material GeSnSbTe (GSST) is proposed for high-speed phase-change memory (PCM). The device characteristics of PCM employing GeSnSbTe and conventional Ge 2 Sb 2 Te 5 (GST) are compared. Because of high crystallization speed, the GSST device demonstrates the benefits of shorter SET pulse, lower SET current, and higher resistance ratio. |
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ISSN: | 1524-766X 2690-8174 |
DOI: | 10.1109/VTSA.2007.378936 |