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Performances of GeSnSbTe Material for High-Speed Phase Change Memory

In this paper, a new application of phase change material GeSnSbTe (GSST) is proposed for high-speed phase-change memory (PCM). The device characteristics of PCM employing GeSnSbTe and conventional Ge 2 Sb 2 Te 5 (GST) are compared. Because of high crystallization speed, the GSST device demonstrates...

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Bibliographic Details
Main Authors: Chain-Ming Lee, Der-Sheng Chao, Yi-Chan Chen, Ming-Jung Chen, Yen, P.H., Chih-Wei Chen, Hong-Hui Hsu, Wen-Han Wang, Wei-Su Chen, Chen, F., Tsai-Chu Hsiao, Ming-Jer Kao, Ming-Jinn Tsai
Format: Conference Proceeding
Language:eng ; jpn
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Summary:In this paper, a new application of phase change material GeSnSbTe (GSST) is proposed for high-speed phase-change memory (PCM). The device characteristics of PCM employing GeSnSbTe and conventional Ge 2 Sb 2 Te 5 (GST) are compared. Because of high crystallization speed, the GSST device demonstrates the benefits of shorter SET pulse, lower SET current, and higher resistance ratio.
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.2007.378936