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Performances of GeSnSbTe Material for High-Speed Phase Change Memory

In this paper, a new application of phase change material GeSnSbTe (GSST) is proposed for high-speed phase-change memory (PCM). The device characteristics of PCM employing GeSnSbTe and conventional Ge 2 Sb 2 Te 5 (GST) are compared. Because of high crystallization speed, the GSST device demonstrates...

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Main Authors:	Chain-Ming Lee, Der-Sheng Chao, Yi-Chan Chen, Ming-Jung Chen, Yen, P.H., Chih-Wei Chen, Hong-Hui Hsu, Wen-Han Wang, Wei-Su Chen, Chen, F., Tsai-Chu Hsiao, Ming-Jer Kao, Ming-Jinn Tsai
Format:	Conference Proceeding
Language:	eng ; jpn
Subjects:	Crystallization Doping Electrical resistance measurement Nonvolatile memory Optical pulses Phase change materials Phase change memory Space vector pulse width modulation Testing Voltage
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creator	Chain-Ming Lee Der-Sheng Chao Yi-Chan Chen Ming-Jung Chen Yen, P.H. Chih-Wei Chen Hong-Hui Hsu Wen-Han Wang Wei-Su Chen Chen, F. Tsai-Chu Hsiao Ming-Jer Kao Ming-Jinn Tsai
description	In this paper, a new application of phase change material GeSnSbTe (GSST) is proposed for high-speed phase-change memory (PCM). The device characteristics of PCM employing GeSnSbTe and conventional Ge 2 Sb 2 Te 5 (GST) are compared. Because of high crystallization speed, the GSST device demonstrates the benefits of shorter SET pulse, lower SET current, and higher resistance ratio.
doi_str_mv	10.1109/VTSA.2007.378936
format	conference_proceeding
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identifier	ISSN: 1524-766X
ispartof	2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2007, p.1-2
issn	1524-766X 2690-8174
language	eng ; jpn
recordid	cdi_ieee_primary_4239504
source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Crystallization Doping Electrical resistance measurement Nonvolatile memory Optical pulses Phase change materials Phase change memory Space vector pulse width modulation Testing Voltage
title	Performances of GeSnSbTe Material for High-Speed Phase Change Memory
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