Cu Annealing Using Various Concentrations of Hydrogen in a Flexible Hot-Wall Thermal Processing Tool

The importance of stabilizing deposited Cu layers through annealing is discussed. We describe wafer processing in a hot wall annealing tool using inert (nitrogen) and reducing (hydrogen added to nitrogen) ambient.

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Bibliographic Details
Main Authors: Ouaknine, Michel, Ueda, Takeshi, Fukada, Takashi, Malik, Igor J., Yoo, Woo Sik, Guerrieri, Stefano
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Hydrogen
Semiconductor device manufacture
Online Access:Request full text
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Description
Summary:The importance of stabilizing deposited Cu layers through annealing is discussed. We describe wafer processing in a hot wall annealing tool using inert (nitrogen) and reducing (hydrogen added to nitrogen) ambient.
ISSN:1078-8743
2376-6697
DOI:10.1109/ASMC.2007.375113