Degradation-Mode Analysis for Highly Reliable GaN-HEMT

We analyzed the degradation mode of GaN-HEMTs. We observed the sudden degradation to make serious influence on the reliability. In this paper, we proposed a new approach to eliminate sudden-degradation devices. By measuring the gate leakage current before stress test, we can predict the sudden degra...

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Main Authors: Inoue, Y., Masuda, S., Kanamura, M., Ohki, T., Makiyama, K., Okamoto, N., Imanishi, K., Kikkawa, T., Hara, N., Shigematsu, H., Joshin, K.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum gallium nitride
Current measurement
Degradation
Laboratories
Leakage current
Mobile handsets
Stress measurement
Temperature
Testing
Wireless LAN
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creator Inoue, Y.
Masuda, S.
Kanamura, M.
Ohki, T.
Makiyama, K.
Okamoto, N.
Imanishi, K.
Kikkawa, T.
Hara, N.
Shigematsu, H.
Joshin, K.
description We analyzed the degradation mode of GaN-HEMTs. We observed the sudden degradation to make serious influence on the reliability. In this paper, we proposed a new approach to eliminate sudden-degradation devices. By measuring the gate leakage current before stress test, we can predict the sudden degradation. We also discussed the gate leakage current factor, for example, the surface hexagonal pits. Using this eliminating method, we could select the reliable devices with a life of over 1 times 10 6 hours at high-temperature of 200degC.
doi_str_mv 10.1109/MWSYM.2007.379982
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subjects Aluminum gallium nitride
Current measurement
Degradation
Laboratories
Leakage current
Mobile handsets
Stress measurement
Temperature
Testing
Wireless LAN
title Degradation-Mode Analysis for Highly Reliable GaN-HEMT
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