Fundamental W-Band InP DHBT-Based VCOs With Low Phase Noise and Wide Tuning Range

• Main Authors: Makon, R.-E., Driad, R., Schneider, K., Aidam, R., Schlechtweg, M., Weimann, G.
• Format: Conference Proceeding
• Language: English
• Subjects: Circuit optimization; DH-HEMTs; Frequency measurement; Indium phosphide; InP DHBT; Noise measurement; output power; Phase noise; Power generation; Power measurement; Tuning; tuning range; voltage controlled oscillator; Voltage-controlled oscillators
• ISSN: 0149-645X; 2576-7216
• DOI: 10.1109/MWSYM.2007.379985

In this paper, fundamental W-band voltage controlled oscillators (VCOs) featuring low phase noise and wide tuning range are reported. These monolithically integrated circuits (ICs) are fabricated using an InP/InGaAs DHBT technology, exhibiting cut-off frequency values of more than 250 GHz for both f T and f max . The VCOs in differential topology consist of an oscillator core according to the negative resistance type and an ac-coupled output buffer. A first VCO version features operation frequencies ranging between 88 GHz and 100 GHz. Within this tuning range, phase noise values down to -90 dBc/Hz have been achieved at 1 MHz offset frequency, while single-ended output power values up to +4 dBm were measured, resulting in a total signal power of +7 dBm. A second VCO version shows operation frequencies between 101 GHz and 109 GHz. Within this frequency operation interval, phase noise values down to -88 dBc/Hz have been achieved at 1 MHz offset frequency, while a single-ended output power up to +2 dBm was measured, i.e. a total available signal power of +5 dBm.