Study on Growth of Mg-doped N-polar InN by RF-MBE and its Electrical Properties

InN films were grown by RF-MBE on (0001) sapphire substrates. Nitridation of the sapphire substrate prior to growth was carried out at 280degC for 2 hours. After a low-temperature InN buffer layer was deposited at 280degC for 10 min, InN intermediate layer was grown at 530degC for 10 min. Then, non-...

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Bibliographic Details
Main Authors: Muto, D., Naoi, H., Takado, S., Araki, T., Nanishi, Y.
Format: Conference Proceeding
Language:English
Subjects:
Conductivity measurement
Diffraction
Doping
Electron mobility
Hall effect
Indium phosphide
Substrates
Temperature
X-ray scattering
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Summary:InN films were grown by RF-MBE on (0001) sapphire substrates. Nitridation of the sapphire substrate prior to growth was carried out at 280degC for 2 hours. After a low-temperature InN buffer layer was deposited at 280degC for 10 min, InN intermediate layer was grown at 530degC for 10 min. Then, non-and Mg-doped InN layers were grown at 530degC for 1 hour under a nitrogen-rich condition. Mg was supplied by a conventional effusion cell at 130, 135, or 140degC. The thicknesses of the InN films were around 420 nm. All InN films were characterized using XRD, SEM, and Hall-effect measurements.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2007.381148