InP-Based Avalanche Photodiodes with ≫ 2.1μm Detection Capability

Type-II superlattice formed by In 0.53 Ga 0.47 As/GaAs 0.51 Sb 0.49 wafers have been grown on InP substrates. The superlattice is studied in several aspects to explore its potential in achieving ≫2.1μm detection InP-based avalanche photodiodes. The ionisation coefficients of the superlattice In 0.53...

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Bibliographic Details
Main Authors: Goh, Y.L., Ng, J.S., Tan, C.H., David, J.P.R., Sidhu, R., Holmes, A.L., Campbell, J.C.
Format: Conference Proceeding
Language:English
Subjects:
Avalanche photodiodes
Cooling
Dark current
Diodes
Indium compounds
Indium phosphide
Ionization
Remote monitoring
Superlattices
Temperature
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Summary:Type-II superlattice formed by In 0.53 Ga 0.47 As/GaAs 0.51 Sb 0.49 wafers have been grown on InP substrates. The superlattice is studied in several aspects to explore its potential in achieving ≫2.1μm detection InP-based avalanche photodiodes. The ionisation coefficients of the superlattice In 0.53 Ga 0.47 As(5nm) /GaAs 0.47 Sb 0.49 (5nm) are found to be similar to those of In 0.53 Ga 0.47 As. Hence the more compatible avalanche material is InAlAs for low excess noise performance. In addition photoluminescence data indicated that the detection wavelength of these superlattice can be longer by modifying the superlattice combination, while maintaining lattice-matched to InP.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2007.381181