Ku-band Broadband Power Amplifier Designed in 0.2μm GaAs PHEMT Process

A Ku-band MMIC of power amplifier has been designed in the standard 0.2 μm AlGaAs/InGaAs/GaAs PHEMT process of OMMIC. The monolithically integrated single-ended 3-stage power amplifier is biased at class A state. The resistors have been added in series or in parallel with the gate of the PHEMT for e...

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Bibliographic Details
Main Authors: Jia-You Song, Zhi-Gong Wang, Zhi-Qun Li, Yan-Jun Peng, Qin Li
Format: Conference Proceeding
Language:English
Subjects:
Broadband amplifiers
Circuit simulation
Circuit stability
Gallium arsenide
Indium gallium arsenide
MMICs
PHEMTs
Power amplifiers
Resistors
Voltage
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Description
Summary:A Ku-band MMIC of power amplifier has been designed in the standard 0.2 μm AlGaAs/InGaAs/GaAs PHEMT process of OMMIC. The monolithically integrated single-ended 3-stage power amplifier is biased at class A state. The resistors have been added in series or in parallel with the gate of the PHEMT for each stage to improve the stability. Under a single supply voltage of +3.5V, simulations prove that the circuit exhibits a linear output power of more than 28 dBm (P 1dB ); small signal gain of 21 dB, input return loss of less than -15 dB, output return loss of less than -5 dB and power additional efficiency of 23.5%.
DOI:10.1109/ICMMT.2007.381447