A New Noise Parameter Model of Short-Channel MOSFETs

In this paper, a closed form expression for noise parameters of MOSFETs are derived from a more accurate small-signal equivalent circuit. The modeling results show a good agreement with the measured data. Based on the analysis of the noise coming from channel thermal noise and parasitic resistances,...

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Main Authors: Jongwook Jeon, Ickhyun Song, In Man Kang, Yeonam Yun, Byung-Gook Park, Jong Duk Lee, Hyungcheol Shin
Format: Conference Proceeding
Language:English
Subjects:
analytical modeling
Analytical models
channel thermal noise
Circuit noise
Electrical resistance measurement
Equivalent circuits
induced gate noise
MOSFETs
Noise measurement
noise parameters
Optimized production technology
Radio frequency
RF MOSFET
Thermal conductivity
Thermal resistance
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creator Jongwook Jeon
Ickhyun Song
In Man Kang
Yeonam Yun
Byung-Gook Park
Jong Duk Lee
Hyungcheol Shin
description In this paper, a closed form expression for noise parameters of MOSFETs are derived from a more accurate small-signal equivalent circuit. The modeling results show a good agreement with the measured data. Based on the analysis of the noise coming from channel thermal noise and parasitic resistances, the noise contribution from each component is analyzed.
doi_str_mv 10.1109/RFIC.2007.380964
format conference_proceeding
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ispartof 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2007, p.639-642
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source IEEE Xplore All Conference Series
subjects analytical modeling
Analytical models
channel thermal noise
Circuit noise
Electrical resistance measurement
Equivalent circuits
induced gate noise
MOSFETs
Noise measurement
noise parameters
Optimized production technology
Radio frequency
RF MOSFET
Thermal conductivity
Thermal resistance
title A New Noise Parameter Model of Short-Channel MOSFETs
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